g g s d d s d d d d s g g s general description product summary v ds i d (at v gs =10v) 1 40 a r ds(on) (at v gs =10v) < 2.5 m w r ds(on) (at v gs = 6 v) < 2.9 m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.35 65 0.45 power dissipation a p dsm w t a =70c 330 1.2 t a =25c continuous drain current 819 20 128 avalanche energy l=0.1mh c w a t a =70c 500 pulsed drain current c continuous drain current g i d 140 110 t c =25c t c =100c drain-source voltage 60 the aot(b)260l uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition, switching behavior is well controlled with a schottky style soft recovery body diode.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60 v mj avalanche current c 16 a v 2 0 gate-source voltage a t a =25c i dsm c thermal characteristics units maximum junction-to-ambient a c/w r q ja 12 54 15 parameter typ max t c =25c 1.9 165 t c =100c junction and storage temperature range -55 to 175 power dissipation b p d g d s to220 top view bottom view to - 263 d 2 pak top view bottom view aob260l AOT260L AOT260L 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.2 2.7 3.2 v i d(on) 500 a 2 2.5 t j =125c 3.1 3.9 2.2 2.9 m w 1.7 2.2 m w 1.9 2.5 m w g fs 68 s v sd 0.65 1 v v sd 0.85 1.3 v i s 140 a c iss 9400 11800 14200 pf c oss 1090 1360 1770 pf c rss 32 40 68 pf r g 0.5 1 1.5 w q g (10v) 120 150 180 nc q gs 28 40 52 nc q gd 9 15 25 nc t d(on) 30 ns t r 27 ns t d(off) 74 ns t f 12 ns t rr 22 32 42 ns q rr 140 200 260 nc diode forward voltage i s =75a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss r ds(on) static drain-source on-resistance v gs = 6 v, i d =20a to263 diode forward voltage i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a to263 to220 forward transconductance v gs = 6 v, i d =20a to220 drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a m w total gate charge v gs =10v, v ds =30v, i d =20a gate source charge gate drain charge turn-off delaytime m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time body diode reverse recovery time i f =20a, di/dt=500a/ m s v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w turn-off fall time maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters gate resistance f=1mhz a. the value of r q ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. AOT260L 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e - 04 1.0e - 03 1.0e - 02 1.0e - 01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body - diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on - resistance temperature ( c) figure 4: on - resistance vs. junction temperature (note e) v gs =6v i d =20a v gs =10v i d =20a 0 1 2 3 4 5 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on - resistance vs. gate - source voltage (note e) 25 c 125 c v ds =5v v gs =6v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on - region characteristics (note e) 4v 6v 10v vgs=3.5v AOT260L 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 40 80 120 160 v gs (volts) q g (nc) figure 7: gate - charge characteristics 0 3000 6000 9000 12000 15000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =30v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c 100 m s r q jc =0.45 c/w AOT260L 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 100 200 300 400 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de - rating (note f) 0 30 60 90 120 150 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de - rating (note f) 1 10 100 1000 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - ambient (note h) t a =25 c r q ja =65 c/w 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c AOT260L 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr AOT260L 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr
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